型号:

FDMB668P

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET P-CH 20V 6.1A MICROFET8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FDMB668P PDF
产品目录绘图 MicroFET 3.0 x 1.9 Pkg
标准包装 1
系列 PowerTrench®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 6.1A
开态Rds(最大)@ Id, Vgs @ 25° C 35 毫欧 @ 6.1A,4.5V
Id 时的 Vgs(th)(最大) 1V @ 250µA
闸电荷(Qg) @ Vgs 59nC @ 10V
输入电容 (Ciss) @ Vds 2085pF @ 10V
功率 - 最大 800mW
安装类型 表面贴装
封装/外壳 8-MLP,MicroFET?
供应商设备封装 8-MLP,MicroFET(3x1.9)
包装 标准包装
产品目录页面 1609 (CN2011-ZH PDF)
其它名称 FDMB668PDKR
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